|
Worldwide Discrete Power Diode Revenue (millions of Dollars)
| |
1997 |
1998 |
1999 |
2000 |
2001 |
2002 |
2003 |
CAGR (%) |
| Power Diodes |
2,504 |
2,251 |
2,343 |
2,589 |
2,899 |
3,148 |
3,251 |
7.6 |
GaAs Diode Wafers
GaAs Diode Chips
Performance and Advantages
High Maximum Operating Temperature
- Increases load power at high temperature ambience
- Reduces cooling system requirements
- Increases reliability (low risk of thermal run-away)
Low and Temperature Independent Switching Characteristics
- Increase efficiency at high operating frequency
- Increase output capacity at high operating frequency
- Reduce switching losses
- Improve reliability of a series connection,
especially at high
frequencies
Low Leakage Current
- Reduces reverse losses
- Increases reliability, especially for a series connection
- Increases radiation (gamma, neutron) hardness
Soft Recovery
- Reduces noise and over voltage
Positive Temperature Coefficient of the Forward Voltage
- Increases reliability of a parallel connection
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If you are interested in use and/or
the further development of the presented technology,
please Contact Us
High-Temperature GaAs Diode in Ceramic Case (TJUNCTION max = 300ºC)
Reverse I-V Characteristic of a High-Voltage GaAs p-i-n Diode
(Breakdown Voltage =1292V)
Time Recovery Testing
(Typical value 10-15 ns)
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